features z low forward voltage drop z guard ring construction for transient protection z negligible reverse recovery time z low reverse capacita nce peak repetitive peak reverse voltage working peak dc blocking voltage v rrm v rwm v r 40 30 20 v rms reverse voltage v r(rms) 28 21 14 v forward continuous current i fm 350 ma repetitive peak forward current @t 1.0s i frm 1.0 a power dissipation pd 400 mw th ermal resistance jun ction to ambient r ja 250 /w storage temperature t stg -65~+175 electrical ratings @t a =25 parameter symb ol min. typ. max. unit conditions reverse breakdown voltage SD103AMM sd103bmm sd103cmm v (br)r 40 30 20 v ir=10a ir=10a ir=10a forward voltage v f 0.37 0.60 v i f =20ma i f =200ma reverse current SD103AMM sd103bmm sd103cmm i rm 5.0 a v r =30v v r =20v v r =10v capacitance between terminals c t 50 pf v r =0v,f=1.0mhz reverse recovery time t rr 10 ns i f =i r =50~200ma irr=0.1xi r ,r l =100 ? glass minimelf(do-213aa) SD103AMM~cmm maximum ratings and electrical characteristics, single diode @t a =25 paramete r symbol sd103a mm sd103b mm sd103c mm unit mechanical dimension description jedec do-213aa
typical characteristics SD103AMM-sd103cmm
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